1. product profile 1.1 general description p-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? low threshold voltage ? very fast switching ? trench mosfet technology ? 2 kv esd protected 1.3 applications ? relay driver ? high-speed line driver ? high-side loadswitch ? switching circuits 1.4 quick reference data [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . PMV33UPE 20 v, single p-channel trench mosfet table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j =25c ---20v v gs gate-source voltage -8 - 8 v i d drain current v gs =-4.5v; t amb =25c; t 5 s [1] ---5.3a static characteristics r dson drain-source on-state resistance v gs =-4.5v; i d =-3a; t j = 25 c - 30 36 m ? 1 of 4 sales@zpsemi.com www.zpsemi.com
2. pinning information 3. ordering information 4. marking [1] % = placeholder for manufacturing site code table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate sot23 (to-236ab) 2ssource 3 d drain 12 3 017aaa259 g d s table 3. ordering information type number package name description version PMV33UPE to-236ab plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] PMV33UPE ej% PMV33UPE 20 v, single p-channel trench mosfet 2 of 4 sales@zpsemi.com www.zpsemi.com
5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . [2] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [3] measured between all pins. table 5. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j =25c - -20 v v gs gate-source voltage -8 8 v i d drain current v gs =-4.5v; t amb =25c; t 5 s [1] --5.3a v gs =-4.5v; t amb =25c [1] --4.4a v gs =-4.5v; t amb =100c [1] --2.8a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - -17.6 a p tot total power dissipation t amb =25c [2] - 490 mw [1] - 980 mw t sp = 25 c - 4150 mw t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c source-drain diode i s source current t amb =25c [1] --1.2a esd maximum rating v esd electrostatic discharge voltage hbm [3] - 2000 v 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 6 cm 2 . [3] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 6 cm 2 , t 5 s. table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - 222 255 k/w [2] - 111 128 k/w [3] - 7485k/w r th(j-sp) thermal resistance from junction to solder point - 2530k/w PMV33UPE 20 v, single p-channel trench mosfet 3 of 4 sales@zpsemi.com www.zpsemi.com
7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =-250a; v gs =0v; t j =25c -20--v v gsth gate-source threshold voltage i d =-250a; v ds =v gs ; t j = 25 c -0.45 -0.7 -0.95 v i dss drain leakage current v ds =-20v; v gs =0v; t j =25c ---1a v ds =-20v; v gs =0v; t j = 150 c - - -15 a i gss gate leakage current v gs =-8v; v ds =0v; t j = 25 c - - -10 a v gs =8v; v ds =0v; t j = 25 c - - -10 a r dson drain-source on-state resistance v gs =-4.5v; i d =-3a; t j = 25 c - 30 36 m ? v gs =-4.5v; i d =-3a; t j =150c - 4351m ? v gs =-2.5v; i d =-3a; t j = 25 c - 38 47 m ? v gs =-1.8v; i d =-3a; t j = 25 c - 51 65 m ? g fs forward transconductance v ds =-10v; i d =-4.4a; t j =25c - 16 - s dynamic characteristics q g(tot) total gate charge v ds =-10v; i d =-4.4a; v gs =-4.5v; t j =25c - 14.7 22.1 nc q gs gate-source charge - 2.6 - nc q gd gate-drain charge - 2.5 - nc c iss input capacitance v ds = -10 v; f = 1 mhz; v gs =0v; t j =25c - 1820 - pf c oss output capacitance - 208 - pf c rss reverse transfer capacitance - 146 - pf t d(on) turn-on delay time v ds =-10v; i d =-4.4a; v gs =-4.5v; r g(ext) =6 ? ; t j =25c -11-ns t r rise time - 30 - ns t d(off) turn-off delay time - 83 - ns t f fall time - 39 - ns source-drain diode v sd source-drain voltage i s =-1.2a; v gs =0v; t j = 25 c - -0.7 -1.2 v PMV33UPE 20 v, single p-channel trench mosfet 4 of 4 sales@zpsemi.com www.zpsemi.com
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